SPAD Pixel With Sub-NS Dead-Time for High-Count Rate Applications
نویسندگان
چکیده
Single-photon avalanche diode (SPAD) exploitation in high-flux applications is often hindered by the trade-off between SPAD dead-time and afterpulsing probability. In this paper, we present architecture experimental characterization of two chips including a novel sensing, readout scheme designed to minimize (1.78 ns 0.93 respectively) probability (0.14% maximum). We have coupled with high-performance SPADs obtaining an extremely stable (6.44 psrms jitter) that can be easily regulated through external voltage. Thanks its compact size, pixel integrated within high-resolution arrays for GHz applications.
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ژورنال
عنوان ژورنال: IEEE Journal of Selected Topics in Quantum Electronics
سال: 2022
ISSN: ['1558-4542', '1077-260X']
DOI: https://doi.org/10.1109/jstqe.2021.3124825